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High-Accuracy Die Bonders
FDB210P

Ultra-high accuracy bonder / Accuracy: ±0.8µm

FDB210P (Thermo-compression (TC) bonding system)

FDB210P (Thermo-compression (TC) bonding system)

This is ultra-high precision thermo-compression (TC) bonder for optical module assembly.
The high-accuracy alignment mechanism ensures ±0.8µm (3 σ).

Features

  • Ultra-high accuracy bonding (3 σ = ±0.8µm)
  • The small foot-print saves machine set-up space.
  • Capable of handling micro chips.
  • The automatic calibration mechanism stabilizes accuracy by canceling positional changes which occur with time.
  • The parametric sequence control enables programming control of the force, temperature and timings.
  • The load feedback method achieves high-accuracy load control.
  • Unique N2 purge mechanism controls oxygen concentration lower than 100ppm.

Calibration

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The calibration mechanism stabilizes alignment accuracy by detecting the relative positional deviation of the camera used for vision system alignment and feeding back the deviation when alignment for mounting is performed.
With vision system alignment, position accuracy cannot be maintained if the camera position changes because this results in changes in mounting positions as well. The camera is fixed in place and may not seem to be moving, but factors such as use of heating mechanisms and changes in ambient temperature cause the machine to expand/contract, resulting in changes in the camera position over time.
The calibration mechanism therefore offsets such positional changes that occur over time to stabilize alignment accuracy.
This mechanism first performs pattern matching using both the top camera and bottom camera with respect to the same target mark to detect each camera’s deviation from the target mark. By feeding back this deviation when alignment for mounting is performed, the deviation of the camera position is offset.

Specifications

Model FDB210P
Applicable product type VCSEL / LD (Laser Diode) / PD (Photo Diode) / Optical module / LiDAR / etc.
Mounting accuracy ±0.8 µm (3σ)
Substrate size 0.4 mm square to 10.0 mm square
Chip size 0.25 mm square to 6.0 mm square
Chip / Substrate supply method Tray supply, Grip ring
Chip heating method Pulse heat (Max. 450°C)
Substrate heating method Pulse heat (Max. 450°C)
Bonding load 0.1 to 5 N
Unit dimensions 2000 (W) x 1400 (D) x 1700 (H) mm
Unit weight 2,500 kg (Machine only)
Contact Us
Shibuya Corporation
Mechatronics Div. S&H Div. Semi-Conductor System Sales Dept.
2-232, Wakamiya, Kanazawa 920-0054 JAPAN Telephone : +81(76)262-2201 Fax : +81(76)262-2210

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